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Title:
VAPOR DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2008063590
Kind Code:
A
Abstract:

To provide a vapor deposition apparatus which has a simple electrode structure and uses plasma enabling consistent ionization of an evaporated material.

Thermoelectrons emitted from a filament 331 are applied to the vicinity of an exit of a nozzle 311 of a sealed evaporation source 31. Vapor 342 of an evaporation material (Cu) 34 injected into a vacuum chamber 32 from the nozzle 311 of the sealed evaporation source 31 is ionized in the vicinity of the exit of the nozzle 311 by the thermoelectrons emitted by the filament 331, which causes electron avalanche to generate a plasma state of inversed cone shape (flying shape of the evaporation material) 344. The plasma advances toward a substrate (a stainless plate) 333 and forms a deposition film of the deposition material (Cu).


Inventors:
NAKAMURA HIROKI
WATANABE HIROSHI
Application Number:
JP2005124315A
Publication Date:
March 21, 2008
Filing Date:
April 21, 2005
Export Citation:
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Assignee:
FUTABA DENSHI KOGYO KK
NAKAMURA HIROKI
WATANABE HIROSHI
International Classes:
C23C14/32; H05H1/24
Domestic Patent References:
JPH05106030A1993-04-27
JPS61207572A1986-09-13
JPS5527868A1980-02-28
JP2003027222A2003-01-29
JP2001011621A2001-01-16
Attorney, Agent or Firm:
Masamitsu Ariga