To provide a vapor deposition apparatus which has a simple electrode structure and uses plasma enabling consistent ionization of an evaporated material.
Thermoelectrons emitted from a filament 331 are applied to the vicinity of an exit of a nozzle 311 of a sealed evaporation source 31. Vapor 342 of an evaporation material (Cu) 34 injected into a vacuum chamber 32 from the nozzle 311 of the sealed evaporation source 31 is ionized in the vicinity of the exit of the nozzle 311 by the thermoelectrons emitted by the filament 331, which causes electron avalanche to generate a plasma state of inversed cone shape (flying shape of the evaporation material) 344. The plasma advances toward a substrate (a stainless plate) 333 and forms a deposition film of the deposition material (Cu).
WATANABE HIROSHI
NAKAMURA HIROKI
WATANABE HIROSHI
JPH05106030A | 1993-04-27 | |||
JPS61207572A | 1986-09-13 | |||
JPS5527868A | 1980-02-28 | |||
JP2003027222A | 2003-01-29 | |||
JP2001011621A | 2001-01-16 |
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