PURPOSE: To provide a thin-film vapor growth device which is capable of vapor growth of a high dielectric under stable temperature and operating conditions to efficiently form a good quality film.
CONSTITUTION: The device is provided with a reaction chamber 3 for storing a base plate S in the atmospheric gas isolated from the outside, means 5 for controlling the atmospheric temperature of the reaction chamber 3 by adjusting the temperature of its inner wall, means 9 for rotating the base plate S at high speed inside the reaction chamber 3, means 23 for controlling the temperature of the base plate S, means 6 for injecting to the base plate S a reaction gas necessary for forming a film and a means for discharging the gas in the reaction chamber 3 to the outside.
FUKUNAGA YUKIO
MURAKAMI TAKESHI
TSUKAMOTO KIWAMU
