To provide a vapor growth device capable of suppressing deformation caused by the gravity of a susceptor or heating even if the vapor growth device is a face-down type vapor growth device that holds a plurality of substrate holders by the susceptor or a face-down type vapor growth device of tertiary nitride semiconductor which requires vapor growth temperature exceeding 1000°C.

The vapor growth device includes a substrate holder 2 which holds a substrate 1, and a susceptor 3 which rotatably holds the substrate holder. In the vapor growth device, the susceptor being deflected in such a manner as a central portion protrudes upward is arranged with the central portion being pressurized from above by way of a rotation drive shaft 10 for transmitting a rotational drive force to the substrate holder.