Title:
VAPOR GROWTH EQUIPMENT
Document Type and Number:
Japanese Patent JPH05211125
Kind Code:
A
Abstract:
PURPOSE: To decrease powder adhering to the inside of a chamber, during an etching process of a vapor growth equipment, and prevent particle contamination on a wafer arranged in the chamber.
CONSTITUTION: The following are installed in a chamber 1; a table 3 heated at 400-500°C, a gas introducing port 4 for introducing gas into the chamber 1, and a discharging vent 5 for vacuum exhaust. Heaters 6 for heating the chamber 1 at 50-200°C are installed on the wall surface, the bottom surface, and the upper surface of the chamber 1, and prevent etching gas from solidifying.
Inventors:
NARUTOMI YASUO
Application Number:
JP1488092A
Publication Date:
August 20, 1993
Filing Date:
January 30, 1992
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/205; H01L21/302; H01L21/31; (IPC1-7): H01L21/205; H01L21/302; H01L21/31
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)