Title:
VAPOR GROWTH METHOD FOR INSULATING MATERIAL
Document Type and Number:
Japanese Patent JPS609143
Kind Code:
A
Abstract:
PURPOSE:To stabilize and improve the crystal quality of grown single crystal of magnesia spinnel on the surface of silicon single crystal by a method wherein the density of reactive gas of the entire growing region is balanced by performing an epitaxial growth controlling the tilt angle against the surface of the substrate to be grown of a source chamber within the prescribed range. CONSTITUTION:Five sheets of silicon single crystal substrates, having the face 100 of approximately 5cm in diameter as the main surface, are arranged in gas flowing direction as the substrate 5 to be grown, and the epitaxial growth of magnesia spinnel is performed by changing the tilt angle theta of a source chamber 1. At this time, when the tilt angle theta is changed from -1.3 deg. to +1.1 deg., the X- ray diffraction strength of the grown film is markedly reduced to 1.5[Kcps] or thereabout when theta is large against 30[Kcps] in the case of theta=0 deg., and the grown film is scarecely not crystallized when the tilt angle theta is large. The crystal quality of said magnesia spinnel and the density balance of MgCl2 and AlCl3 of reactive gas are sensitive to the above-mentioned tilt, and at this tilt angle theta, an excellent and uniform crystal can be obtained within the range of -0.5 deg.<=theta<=0.5 deg..
Inventors:
KIMURA TAKAAKI
Application Number:
JP11738783A
Publication Date:
January 18, 1985
Filing Date:
June 29, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/316; H01L21/86; (IPC1-7): H01L21/86; H01L21/316
Attorney, Agent or Firm:
Sadaichi Igita
Next Patent: JPS609144