VAPOR PHASE DIFFUSION

Title:

VAPOR PHASE DIFFUSION

Document Type and Number:

Japanese Patent JPH06310449

Kind Code:

A

Abstract:

PURPOSE: To allow large area diffusion and controllability improvement by supplying the vapor phase atmosphere with DMZn, DEZn, etc., permitting the Zn to be adsorbed to the surface of the INGaAsP crystal of a contact layer and diffusing Zn on the contact layer and a clad layer by using a metal organic vapor deposition device.

CONSTITUTION: An undoped InP clad layer 2 and an undoped InGaAsP contact layer 3 are formed on an n-type InP substrate 1. Then, AsH3, PH3, DMZn and hydrogen are permitted to flow by a vapor phase growing device. High concentration Zn vapor phase diffusion is allowed by providing the contact layer 3 with the InGaAsP layer and the high concentration Zn is taken into the InGaAsP layer. Thus, large diffusion area is allowed by using the vapor phase growth device which allows several-inch crystal growth and controllability is improved by the accurate flow control using gas as the material.

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Inventors:

TSUCHIYA TOMONOBU
KONO TOSHIHIRO
TANIWATARI TAKESHI
KOMORI MASAAKI

Application Number:

JP9274393A

Publication Date:

November 04, 1994

Filing Date:

April 20, 1993

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/22; (IPC1-7): H01L21/22

Attorney, Agent or Firm:

Ogawa Katsuo

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