PURPOSE: To obtain an excellent epitaxial crystal having uniform composition and thickness within a face by heating a substrate under the state wherein there is no flow of epitaxial growing gas on the substrate, and performing epitaxial growing.
CONSTITUTION: A gas introducing pipe 12 having a closing valve 11 and a gas exhausting pipe 14 having a closing valve 13 are provided for a reaction container 15. An epitaxial growing substrate 16 is provide in the reaction container 15. The closing valve 13 of the gas introducing pipe 12 and the closing valve 13 of the gas exhausting pipe 14 are opened and closed at the deviated times each other. The timing when the epitaxial growing gas is supplied into the reaction container 15 and the timing when the gas after the epitaxial growing is exhausted from the reaction container 15 are deviated. The state wherein the epitaxial growing gas remains in the reaction container and there is no flow of the gas is formed. At this time point, the epitaxial growing substrate 16 is heated. Since the gas having the uniform concentration is supplied on the substrate, the epitaxial crystal whose composition and thickness are stable is obtained.
SUGIYAMA IWAO
MARUYAMA KENJI
