Title:
VAPOR PHASE GROWING METHOD FOR GALLIUM ARSENIDE
Document Type and Number:
Japanese Patent JPS57205400
Kind Code:
A
Abstract:
PURPOSE:To form an Fe doped buffer layer with high resistance on a substrate with high reproducibility by means of a simple apparatus by leading a gaseous mixture of AsCl3 and H2 to Ga set in the relatively low temp. region of a reaction tube and introducing produced HCl into the reaction system. CONSTITUTION:A gaseous mixture 13 of AsCl3 and H2 is fed to a boat 16 holding Ga17 at the upper stream side of gas and Fe18 at the down stream side. The gaseous mixture reacts at >= about 400 deg.C, and formed As4 is absorbed in the Ga17 to the solubility limit. Since the boat 16 is in a relatively low temp. region, produced HCl reacts only with the Fe18 to form FeCl2, and the FeCl2 is carried toward a substrate 21. Fe as a reaction product of FeCl2 with H2 is absorbed in the GaAs crystal of the substrate 21 to form a buffer layer with high resistance. A doping gas 14 for forming an active layer and a gaseous mixture 15 of AsCl3 and H2 are then led to a source Ga20 in a boat 19 to form an active layer on said buffer layer.
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Inventors:
ARAI KENICHI
Application Number:
JP9056981A
Publication Date:
December 16, 1982
Filing Date:
June 11, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C30B25/02; C01G28/00; C30B29/42; H01L21/205; (IPC1-7): C01G28/00; C30B25/02; C30B29/42; H01L21/205