To provide a vapor phase growth apparatus allowing a thin film having excellent interface steepness to be formed by a simple apparatus configuration with a less number of lines.

The vapor phase growth apparatus includes: a material gas supply line connected to a reaction furnace; a bent line; at least one or more material gas supply sources connected to the material gas supply line via a first valve and having piping connected to the bent line via a second valve; a first flow rate adjustment line connected to the material gas supply line via a third valve and connected to the bent line via a fourth valve; a second flow rate adjustment line connected to the material gas supply line via a fifth valve and connected to the bent line via a sixth valve; and a control section which brings the fourth valve and the fifth valve into their closed state when the third valve and the sixth valve enter their open state, and brings the fourth valve and the fifth valve into their open state when the third valve and the sixth valve enter their closed state.