Title:
VAPOR PHASE GROWTH APPARATUS AND TEMPERATURE MEASUREMENT METHOD
Document Type and Number:
Japanese Patent JP2019106462
Kind Code:
A
Abstract:
To measure a temperature of an outer peripheral side of a wafer, with a high degree of accuracy.SOLUTION: A growth device comprises: a reaction chamber forming a film on a wafer by a vapor phase growth reaction; a material gas supply part arranged above the reaction chamber, and supplying material gas to the reaction chamber; a radiation thermometer arranged above the material gas supply part, and measuring a temperature of a predetermined distance from a center of the wafer; a holding part mounting the wafer thereon; a rotation part rotating the holding part with an axis as a center of the holding part; a heater arranged on a surface side opposite to a mounting surface of the wafer, of the holding part, and heating the wafer; a temperature holding part into which the temperature measured by the radiation thermometer while rotating the wafer is input, and which holds the temperature of the lowest temperature in each prescribed period; and a control part controlling the heater on the basis of the held temperature.SELECTED DRAWING: Figure 1
Inventors:
IECHIKA YASUSHI
Application Number:
JP2017238072A
Publication Date:
June 27, 2019
Filing Date:
December 12, 2017
Export Citation:
Assignee:
NUFLARE TECHNOLOGY INC
International Classes:
H01L21/205; C23C16/52; H01L21/31
Attorney, Agent or Firm:
Hiroyuki Nagai
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Yasushi Kawasaki
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Yasushi Kawasaki