Title:
VARIABLE WAVELENGTH LASER DIODE
Document Type and Number:
Japanese Patent JP3045098
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce an electric power consumption by making a refractive index of a charge storage layer large than the refractive indexes of a first and a second clad layer and by making a potential of the first clad layer, corresponding to carriers higher than a potential of the charge storage layer corresponding to the carriers.
SOLUTION: A wavelength-controlling region 102 having a second clad layer 114 formed on a semiconductor substrate 110, a diffraction grating 113 on the second clad layer 114, a charge storage layer 112 on the second clad layer 114 and a first clad layer 111 formed on the charge storage layer 112. A first electrode 116 is formed on a surface of the wavelength-controlling region 102 and a second electrode 115 is formed on another side. A refractive index of the charge storage layer 112 is larger than the refractive indexes of the first clad layer 111 and of the second clad layer 112 and a potential of the first clad layer 111 with respect to carriers is higher than the potential of the charge storage layer 112 with respect to the carriers. By this means, the recombination of electrons and positive holes does not occur, so that consumption of electric power is prevented.
Inventors:
Kenichiro Yashiki
Application Number:
JP9385497A
Publication Date:
May 22, 2000
Filing Date:
April 11, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01S5/00; G02F1/015; H01S5/042; H01S5/50; (IPC1-7): H01S5/50; G02F1/015
Domestic Patent References:
| JP242784A | ||||
| JP3144613A | ||||
| JP4291304A | ||||
| JP8286159A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)