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Patent Searching and Data


Title:
VOLTAGE OFFSET DIODE
Document Type and Number:
Japanese Patent JP2002290169
Kind Code:
A
Abstract:

To provide a voltage offset diode which is designed, by using the microwave monolithic integrated technology.

An interface, consisting of the voltage offset diode (DD), is attached to a part between an output (S) of an upstream circuit (16) and the input of a downstream circuit (18) and constituted, by using the monolithic microwave integrated technology. The offset diode (DD) has selected components, such that a bias voltage (VD) of the upstream circuit (16) is offset by an offset, corresponding more or less to a difference between the bias voltages (VD and VL) of the upstream circuit (16) and the downstream circuit (18). The bias current level of the downstream circuit is comparatively higher than the threshold current level of the offset diode.


Inventors:
DUEME PHILIPPE
DECAESTEKE THIERRY
Application Number:
JP2001372331A
Publication Date:
October 04, 2002
Filing Date:
December 06, 2001
Export Citation:
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Assignee:
THALES SA
International Classes:
H01L29/47; H01L29/861; H01L31/0336; H03F1/42; H03F3/08; H01L29/872; H03F3/60; H04B10/12; (IPC1-7): H03F3/08; H01L29/861; H01L29/872
Attorney, Agent or Firm:
Yoshio Kawaguchi (5 outside)