Title:
WAFER FOR FORMING ELEMENT AND PRODUCTION METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2021082734
Kind Code:
A
Abstract:
To control a stress in a thin layer to be a desired value while simplifying production processes.SOLUTION: In a production method of a wafer for forming an element, a semiconductor wafer 100 having a plurality of chip formation regions 101 is prepared; a thin layer is formed on the semiconductor wafer 100; and a part of the thin layer 110 to constitute each element in the chip formation region 101 is defined as an element component part 110a and a stress is adjusted to give a predetermined stress value in the element component part 110a. In the step of adjusting a stress, a resist 120 is disposed on the thin layer; the resist is exposed by using a photomask 200 having an opening 201 formed therein; the resist is developed to form an opening in the resist; and ion implantation is performed by using the resist 120 as a mask. In the step of exposing the resist 120, a photomask having an adjusted percentage of the opening based on the stress induced in the element constituting part is used.SELECTED DRAWING: Figure 2D
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Inventors:
TESHIGAWARA AKIHIKO
SUZUKI YOSHIMI
SUZUKI YOSHIMI
Application Number:
JP2019209854A
Publication Date:
May 27, 2021
Filing Date:
November 20, 2019
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L41/35; H01L21/265; H01L21/266; H01L41/113; H04R17/00; H04R31/00
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office