Title:
WAFER MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2023085189
Kind Code:
A
Abstract:
To provide a wafer manufacturing method with higher manufacturing efficiency than before.SOLUTION: A wafer manufacturing method for obtaining a wafer from an ingot (2) includes the following procedures, steps, or processes: irradiating a surface (21) on one end side in a height direction of the ingot with a laser beam having transmissivity to form a peeling layer (25) at a depth corresponding to the thickness of the wafer from the surface; at this time, irradiating the surface with the laser beam so as to make irradiation frequency higher in a facet area (RF) than in a non-facet area (RN); peeling wafer precursor (26) being a portion between the surface of the ingot and the peeling layer from the ingot by using the peeling layer; and flattening a principal surface of a plate-like peeled body obtained by peeling the wafer precursor from the ingot in an electrochemical mechanical manner to obtain the wafer.SELECTED DRAWING: Figure 4A
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Inventors:
YASUDA KOICHIRO
TAKAGI RYOTA
KAWAZU TOMOKI
NOMURA SOTA
SHIRAI HIDEAKI
SOLTANI BAHMAN
SOBASHIMA SHUNSUKE
TAKAGI RYOTA
KAWAZU TOMOKI
NOMURA SOTA
SHIRAI HIDEAKI
SOLTANI BAHMAN
SOBASHIMA SHUNSUKE
Application Number:
JP2022128100A
Publication Date:
June 20, 2023
Filing Date:
August 10, 2022
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L21/304; B23K26/53
Attorney, Agent or Firm:
Patent Attorney Corporation Yuuai Patent Office
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