Title:
ウェハ研磨方法及びウェハ研磨装置
Document Type and Number:
Japanese Patent JP7433170
Kind Code:
B2
Abstract:
To provide a wafer polishing method and a wafer polishing device which can suppress occurrence of scratches to a surface of a wafer and can achieve high workability and accuracy when the wafer having different polished properties between a first surface and a second surface is polished.SOLUTION: A wafer polishing method relatively moves a first surface W1 of a wafer W and a first polishing pad 7 and polishes the first surface W1 at a predetermined surface pressure, and relatively moves a second surface W2 of the wafer W and a second polishing pad 9 and polishes the second surface W2. The wafer W has polished property of the second surface W2 larger than polished property of the first surface W1. The first polishing pad 7 and the second polishing pad 9 have a base material that is made of a resin and is formed with a plurality of air bubbles, and polished particles which are held by the base material and are stored in the air bubbles. Polishing efficiency of the first polishing pad 7 is lower than polishing efficiency of the second polishing pad 9.SELECTED DRAWING: Figure 1
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Inventors:
Yousuke Takahashi
Application Number:
JP2020149528A
Publication Date:
February 19, 2024
Filing Date:
September 07, 2020
Export Citation:
Assignee:
Noritake Company Limited
International Classes:
B24B37/08; B24B37/28; B24D11/00; H01L21/304
Domestic Patent References:
| JP2004071833A | ||||
| JP2008068390A | ||||
| JP2004025415A | ||||
| JP10277923A | ||||
| JP2015211993A | ||||
| JP2015005702A |
Foreign References:
| WO2018116521A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Patena