Title:
ウェーハの研磨方法およびウェーハの製造方法
Document Type and Number:
Japanese Patent JP7452403
Kind Code:
B2
Abstract:
Provided is a wafer polishing method comprising: a step of determining a first correlation a second correlation; a step of calculating mechanical polishing rate/chemical polishing rate; a step of obtaining a relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and one or more indications of wafer flatness and determining a specific range of the ratio of the mechanical polishing rate to the chemical polishing rate; a step of selecting a first target polishing solution that meets the specific range of the ratio of the mechanical polishing rate to the chemical polishing rate based on the first correlation and the second correlation; and a step of polishing wafers using the first target polishing solution. Also provided is a wafer production method including a step of performing a polishing process by the above wafer polishing method.
Inventors:
Shigo Hayashi
Kazunari Takaishi
Kazunari Takaishi
Application Number:
JP2020210662A
Publication Date:
March 19, 2024
Filing Date:
December 18, 2020
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/304; B24B1/00; B24B37/00; B24B37/005
Domestic Patent References:
| JP2002184733A | ||||
| JP2018074086A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Keisuke Kawahara
Yusuke Yamaguchi
Mitsutsugu Sugimura
Keisuke Kawahara
Yusuke Yamaguchi