Title:
ウエーハの研磨方法
Document Type and Number:
Japanese Patent JP4608856
Kind Code:
B2
Abstract:
There is provided a method for polishing a wafer in which linear defects are not generated. The polishing method comprises the steps of: holding a wafer on a rotatable wafer holding plate; and polishing a surface of the being in contact with a polishing cloth adhered on a rotatable table in such a state that a polishing agent is supplied onto the polishing cloth, wherein the polishing agent is an alkaline solution which contains silica having particles each in the shape of almost an sphere as a main component and further an organic base or a salt thereof. A quaternary ammonium hydroxide is used as the organic base or the salt thereof.
Inventors:
Naoyuki Takamatsu
Application Number:
JP2003278970A
Publication Date:
January 12, 2011
Filing Date:
July 24, 2003
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
B24B37/00; H01L21/304; C09G1/02; H01L21/306
Domestic Patent References:
JP2003041239A | ||||
JP2003206475A | ||||
JP2003188122A | ||||
JP2001011433A | ||||
JP2002338951A | ||||
JP2003136406A | ||||
JP2003124160A | ||||
JP2003197591A | ||||
JP2002190458A | ||||
JP11111657A | ||||
JP63074911A |
Foreign References:
WO2003053602A1 |
Attorney, Agent or Firm:
Shoji Ishihara
Shinsuke Ishihara
Shinsuke Ishihara