To provide a wafer processing method capable of surely grinding a wafer to such an extent that an embedded electrode is not exposed to a rear surface of the wafer.

A wafer processing method for dividing a wafer 11 which includes a chamfering part in an outer peripheral edge and in which a device is formed in each region and a plurality of embedded electrodes are buried from each device into individual devices comprises the steps of: positioning a cutting blade at an outer peripheral edge of the wafer 11 and partly removing the chamfering part by circularly cutting the wafer to a prescribed depth from a surface side of the wafer; grinding a rear surface of the wafer 11 to such an extent that the embedded electrode is not exposed to a rear surface 11b; and forming the embedded electrode as a through electrode by protruding the embedded electrode from the rear surface of the wafer 11 by etching the wafer 11 from the rear surface of the wafer 11. In the chamfering part removing step, the prescribed depth is a depth slightly exceeding an end point of the embedded electrode buried from the surface of the wafer toward the rear surface of the wafer. The wafer processing method ends grinding when a remaining chamfering part is removed in the rear surface grinding step.