Title:
WAFER PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2023078910
Kind Code:
A
Abstract:
To provide a wafer processing method that can remove a chamfered part without generating cracks in a wafer and grind the rear face of the wafer to have a desired finished thickness.SOLUTION: A wafer processing method includes: a removing step of irradiating an area from the boundary between a device area 8 and an outer peripheral excess area 10 up to the outer periphery of a wafer 2 with a laser beam LB with a wavelength having absorbency for the wafer 2 from the side of a front face 2a of the wafer 2, and removing the outer peripheral excess area 10 to a depth corresponding to a finished thickness of the wafer 2; a protective member disposing step of disposing a protective member on the front face 2a of the wafer 2; and a rear face grinding step of holding the side of the protective member on a chuck table, and grinding a rear face 2b of the wafer 2 until the finished thickness is obtained.SELECTED DRAWING: Figure 5
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Inventors:
HONGO TOMOYUKI
Application Number:
JP2021192238A
Publication Date:
June 07, 2023
Filing Date:
November 26, 2021
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/304; B24B7/22; B28D5/04; B28D7/04
Attorney, Agent or Firm:
Naozumi Ono
Sachiko Okunuki
Tsuyoshi Tsukano
Yoshifumi Kaneko
Sachiko Okunuki
Tsuyoshi Tsukano
Yoshifumi Kaneko
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