Title:
ウエーハの加工方法
Document Type and Number:
Japanese Patent JP6865497
Kind Code:
B2
Abstract:
To form a wafer gettering layer on a wafer, by controlling the melting of alkaline fine grains contained in an abrasive pad while supplying pure water.SOLUTION: A processing method of a wafer (W) includes a polishing step of polishing the reverse face (W2) of the wafer with action of dissolved alkaline fine grains by pressing a polishing pad against a silicon substrate with a predetermined pressure, while supplying pure water to a polishing pad (47) containing solid-phase reaction fine grains (81) inducing solid-phase reaction with silicon, gettering fine grains (82) having a Mohs hardness higher than that of silicon and forming a gettering layer, and alkaline fine grains (85), and a gettering layer formation step of forming the gettering layer by pressing the polishing pad with a pressure lower than the predetermined pressure, while supplying pure water of water temperature for lowering the solubility of the alkaline fine grains, after executing the polishing step, and scratching the reverse face of the wafer by polishing with the polishing pad.SELECTED DRAWING: Figure 2
Inventors:
Arifuku Hokyu
Application Number:
JP2017123912A
Publication Date:
April 28, 2021
Filing Date:
June 26, 2017
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/304; B24B37/00; B24D11/00; H01L21/322
Domestic Patent References:
| JP2015046550A | ||||
| JP2010225987A | ||||
| JP2012178450A | ||||
| JP2002532898A | ||||
| JP2009279684A |
Attorney, Agent or Firm:
Hiroyoshi Aoki
Amada Masayuki
Amada Masayuki