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Title:
ウェーハの加工方法
Document Type and Number:
Japanese Patent JP7009027
Kind Code:
B2
Abstract:
A method of processing a wafer is provided. The method includes a cutting groove forming step of forming a cutting groove having a depth corresponding to a thickness of a device chip from a front sideof the wafer along a predetermined dividing line; a sealing step of sealing the front surface of the wafer with a sealing material; a grinding step of grinding the wafer from the back side of the wafer to the finished thickness to expose the sealing material in the cutting groove; an alignment step of detecting an alignment mark by an infrared ray imaging member photographing the front side of the wafer from the front side of the wafer through the sealing material, and detecting a predetermined dividing line for laser processing according to the alignment mark; a modified layer forming step of positioning the condensing point of the laser beam having a wavelength of transparency to the sealing material inside the sealing material in the cutting groove to radiate the laser beam to form a modified layer; and a dividing step of applying an external force to the sealing material in the cutting groove and dividing the wafer into respective device chips with a front surface and four side surfaces surrounded by the sealing material with the modified layer as a dividing starting point.

Inventors:
Katsuhiko Suzuki
Yuto Ban
Application Number:
JP2017172836A
Publication Date:
January 25, 2022
Filing Date:
September 08, 2017
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/301; B23K26/53; B24B27/06; H01L21/304
Domestic Patent References:
JP2017054888A
JP2015023078A
JP2005150523A
JP2007190596A
JP2009538538A
JP2017112269A
JP2006052279A
JP2003327666A
Foreign References:
WO2014156688A1
Attorney, Agent or Firm:
Matsumoto
Tomohiro Okamoto
Takahiro Kasahara



 
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