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Patent Searching and Data


Title:
WAVEGUIDE TYPE SEMICONDUCTOR OPTICAL ELEMENT AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JPH09133902
Kind Code:
A
Abstract:

To make high-speed driving possible, to lower element resistance, to improve element performance and to improve the yield at the time of element formation by equalizing the thickness of the expanded and exposed region of a first clad layer to the thickness of the first clad layer in the striped optical waveguide structure.

This element has striped optical waveguide structures formed by embedding both sides of a laminated structure successively laminated with the first clad layer 42, a core layer 43, a second clad layer 44 and a conductor layer 45 on a semi-insulating semiconductor substrate 41 by high-resistance semiconductor layers 46. Further, a first electrode 48 arriving at the surface of the high-resistance semiconductor layers 46 is formed in the exposed region of the first clad layer 42 expanded on one side thereof and a second electrode 47 is formed on this contact layer 45. The clad layers are so formed that the thickness of the expanded and exposed region of the first clad layer 42 and the thickness of the first clad layer 42 existing the striped optical waveguide structures are equaled to each other.


Inventors:
YOSHIMOTO NAOTO
MATSUMOTO SHINICHI
KONDO SUSUMU
NOGUCHI ETSUO
Application Number:
JP29317495A
Publication Date:
May 20, 1997
Filing Date:
November 10, 1995
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G02B6/12; G02B6/13; G02F1/025; H01L21/302; H01L21/3065; (IPC1-7): G02F1/025; G02B6/12; G02B6/13; H01L21/3065
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)