Title:
WAVELENGTH VARIABLE LASER DIODE
Document Type and Number:
Japanese Patent JP2004349592
Kind Code:
A
Abstract:
To increase an efficiency by reducing leakage in a control current or a drive current in a wavelength variable laser diode of a TTG (tunable twin-guide)-DFB (distributed feedback) structure.
In the wavelength variable laser diode of a TTG-DFB structure, a semiconductor barrier layer (27) is formed around a current path of a drive current or a control current to an active layer (22E) or a tuning layer (22C) to suppress carrier leakage.
Inventors:
SATOU YOSHIHIRO
Application Number:
JP2003147126A
Publication Date:
December 09, 2004
Filing Date:
May 26, 2003
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01S5/12; (IPC1-7): H01S5/12
Domestic Patent References:
| JPH07226565A | 1995-08-22 | |||
| JPH0697591A | 1994-04-08 | |||
| JPH07135368A | 1995-05-23 | |||
| JPS5390786A | 1978-08-09 |
Attorney, Agent or Firm:
Tadahiko Ito
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