To provide a winding method for semiconductor device bonding wire whereby possible collapse of winding due to vibration is prevented.

A bonding wire is wound on the cylindrical barrel part 3 of a spool at a winding width of L1 so as to form a first winding layer 1, and further wound on the first winding layer at a winding width L2 larger than the winding width L1 so as to form a second winding layer 2. Also it is wound on the second winding layer 2 at a winding width L3 larger than the winding width L2 of the second winding layer 2 so as to form a third winding layer 3. In the same manner, with a winding width increased more as a winding layer is later, the bonding wire is wound in multiple winding layers so that a relation of L1<L2<L3... can be obtained.