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Patent Searching and Data


Title:
WIRE TYPE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP2007311762
Kind Code:
A
Abstract:

To provide a wire type semiconductor device capable of ensuring a restrained short channel effect and a high operation performance, and to provide an economical method for fabrication thereof.

A wire type semiconductor comprises a main unit, a semiconductor substrate equipped with a pair of support poles projected upward from the main unit and at least one fin projected upward from the main unit with its ends connected to the pair of support poles, at least one semiconductor wire formed separately on at least one fin with its ends connected to the pair of support poles, a common gate electrode formed enclosing the external surface of at least one semiconductor wire and a gate insulating film placed between at least one semiconductor wire and the common gate electrode.

COPYRIGHT: (C)2008,JPO&INPIT


Inventors:
KIM SUK-PIL
PARK YOUNG-SOO
KIM WON-JOO
Application Number:
JP2007055726A
Publication Date:
November 29, 2007
Filing Date:
March 06, 2007
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L29/786; H01L29/41; H01L29/423; H01L29/49
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro