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Title:
WIRING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH04142060
Kind Code:
A
Abstract:

PURPOSE: To easily form an interconnection to an upper layer and to realize the high density of interconnections in the upper layer by a method wherein an interconnection whose interconnection length is large is alloted to an upper layer away from a terminal layer, the utilization rate in the upper layer is increased by the small number of interconnections and interconnections to be extracted to the upper layer are reduced to a minimum.

CONSTITUTION: First-layer interconnection layers 2 and third-layer interconnections 4 are formed in the transverse direction in such a way that interconnections inside the interconnection layers are not overlapped in their thickness direction; second-layer interconnection layers 3 and fourth-layer interconnection layers 5 are formed in the longitudinal direction in such a way that interconnections inside the interconnection layers are not overlapped in their thickness direction. When the interconnections whose interconnection length is large are alloted to an upper layer away from a terminal layer, the interconnection density of the upper layer can be increased by the small number of interconnections, and the upper layer can be utilized effectively by a smallest bend or the smallest number of through holes. Thereby, when terminals 1 are situated in the lowermost layer, bends are reduced at both end points of a interconnection in order to extract the interconnection from the terminals 1 to the upper layer and the through holes are used little.


Inventors:
NAGASE HACHIDAI
ISHII TAKEMOTO
SUZUKI KATSUKI
Application Number:
JP26308390A
Publication Date:
May 15, 1992
Filing Date:
October 02, 1990
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G06F17/50; H01L23/528; H01L21/82; (IPC1-7): G06F15/60; H01L21/82
Domestic Patent References:
JPH02222072A1990-09-04
JPH01144649A1989-06-06
Attorney, Agent or Firm:
Kenjiro Take (1 person outside)



 
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