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Title:
ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE FILM FORMING MATERIAL, TARGET USING THE SAME, METHOD FOR FORMING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT CONDUCTIVE SUBSTRATE
Document Type and Number:
Japanese Patent JP2012140276
Kind Code:
A
Abstract:

To provide a zinc oxide-based transparent conductive film forming material usable for a target for forming a transparent conductive film which has chemical durability such as weather resistance and heat resistance and a proper etching rate during patterning, while retaining conductivity for practical use, and to provide a method for producing the zinc oxide-based transparent conductive film forming material, a target using the same, and a method for forming a zinc oxide-based transparent conductive film.

The zinc oxide-based transparent conductive film forming material is an oxide sintered body containing zinc oxide as a principal component, containing at least one of gallium fluoride and aluminum fluoride, and further containing titanium, wherein the proportion of the number of titanium atoms to the number of all metal atoms is >2 to ≤10%, the proportion of the number of metal atoms of one or both of gallium fluoride and aluminum fluoride to the number of all metal atoms is 0.1-5%, and a low valence titanium oxide represented by the general formula: TiO2-X (X=(0.1 to 1)) is used as a titanium source.


Inventors:
NAKADA KUNIHIKO
NAKAMURA YOSHINOBU
SUZUKI AKIO
Application Number:
JP2010293547A
Publication Date:
July 26, 2012
Filing Date:
December 28, 2010
Export Citation:
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Assignee:
SUMITOMO CHEMICAL CO
OSAKA SANGYO UNIV
International Classes:
C04B35/453; C23C14/34; H01B5/14; H01B13/00
Attorney, Agent or Firm:
Toshikazu Fukai