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Title:
ZINC OXIDE TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
Japanese Patent JP3904378
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a zinc oxide transparent conductive film lowering the resitivity of ZnO and having the lower resitivity than ITO has.
SOLUTION: Dopants, for example an n-type dopant like Ga which is an element of group III and p-type dopant like N which is an element of group V, are doped on a ZnO crystal layer, wherein the n-type dopant is more than the p-type dopant and the n-type dopant is dorped at the impurity concentration of 1×1018 cm-3 or higher.


Inventors:
Tetsuya Yamamoto
Ken Nakahara
Application Number:
JP2000234945A
Publication Date:
April 11, 2007
Filing Date:
August 02, 2000
Export Citation:
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Assignee:
ROHM Co., Ltd.
International Classes:
G02F1/1343; H01B5/14; H01L31/0224; H01L31/0296; H01L31/04; H01L31/18; (IPC1-7): H01B5/14; G02B1/10; H01L31/04; //G02F1/1343
Domestic Patent References:
JP2001035252A
JP8111123A
JP2001007026A
JP2001068707A
JP2001189114A
Attorney, Agent or Firm:
Kawamura Taku