Title:
METHOD FOR SELECTIVELY FORMING DIAMOND
Document Type and Number:
Japanese Patent JP3241447
Kind Code:
B2
Abstract:
PURPOSE: To provide a method for selectively forming diamond in which the formation density of the initial diamond nuclei in a prescribed region on a substrate can be increased to selectively form a pattern of a diamond film of a prescribed shape excellent in adhesion.
CONSTITUTION: The method for selectively forming diamond is composed of (1) a step for forming a pattern with a masking material on a substrate, (2) a step for subjecting the substrate to electrical field plasma treatment after the step, (3) a step for removing the masking material and (4) a step for synthesizing the diamond by a vapor process. The operational sequence of the steps (3) and (4) may be reversed and the step (3), as necessary, can be omitted.
Inventors:
Satoshi Katsumata
Tomio Kazehaya
Tomio Kazehaya
Application Number:
JP21520692A
Publication Date:
December 25, 2001
Filing Date:
August 12, 1992
Export Citation:
Assignee:
Nippon Special Ceramics Co., Ltd.
International Classes:
C30B29/04; H01L21/205; (IPC1-7): C30B29/04
Domestic Patent References:
| JP3115194A | ||||
| JP3215392A | ||||
| JP62297298A | ||||
| JP4357194A | ||||
| JP6334927A |
Other References:
Ｓ．ＹＵＧＯ ｅｔ ａｌ．，”Ｇｅｎｅｒａｔｉｏｎ ｏｆ ｄｉａｍｏｎｄ ｎｕｃｌｅｉ ｂｙ ｅｌｅｃｔｒｉｃ ｆｉｅｌｄ ｉｎ ｐｌａｓｍａ ｃｈｅｍｉｃａｌ ｖａｐｏｒ ｄｅｐｏｓｉｔｉｏｎ”，Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，Ｖｏｌ．５８，Ｎｏ．１０，１１ Ｍａｒ．１９９１，ｐ．１０３６−１０３８
Attorney, Agent or Firm:
Naoki Fukumura