Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
VARISTOR
Document Type and Number:
Japanese Patent JP2023161309
Kind Code:
A
Abstract:
To provide an inexpensive varistor with an operating voltage ranging from extremely low to high values, requiring fewer manufacturing steps.SOLUTION: In the present invention, a crystal thin film of a molybdenum oxide with a forbidden band width of 3.45 eV or more is used as a semiconductor. One upper electrode and one lower electrode, or two upper electrodes are formed in the crystal thin film of molybdenum oxide. The lowest operating voltage is below 1 V.SELECTED DRAWING: Figure 2

More Like This:
JPS5854601METHOD OF FORMING THICK FILM VARISTOR ON HYBRID CIRCUIT BOARD
JP7260875Flexible surge absorption sheet, flexible surge absorption unit, flexible surge absorber, and surge measurement device
WO/2016/088675VARISTOR-FUNCTION-EQUIPPED LAMINATED SEMICONDUCTOR CERAMIC CAPACITOR
Inventors:
KATODA TAKASHI
Application Number:
JP2022071619A
Publication Date:
November 07, 2023
Filing Date:
April 25, 2022
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KATODA TAKASHI
SAITO ISAO
International Classes:
H01C7/108; C23C16/40; H01L21/822
Attorney, Agent or Firm:
Okabe
Koji Yoshizawa
Haruhiko Mimura
Hiroshi Okabe
Takashi Miyake



 
Previous Patent: Anodization-assisted grinding device and anodization-assisted grinding method

Next Patent: Manufacturing method of mesophase pitch