Title:
CLEANING METHOD OF ELECTRON SOURCE AND ELECTRON BEAM LITHOGRAPHY APPARATUS
Document Type and Number:
Japanese Patent JP2017027917
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To prevent deterioration of the electron beam radiation characteristics and lowering of operation rate of a lithography apparatus, by removing impurities adhering to an electron source efficiently.SOLUTION: A cleaning method of an electron source includes a step of supplying inert gas into an electron gun chamber 60, a step of ionizing the inert gas by discharging electrons from an electron source 64, and removing impurities adhering to the electron source 64 due to the impact of ions generated, and a step of stopping inert gas supply based on a change in the electron beam discharge characteristics of the electron gun 14.SELECTED DRAWING: Figure 2
Inventors:
MIYAMOTO FUSAO
Application Number:
JP2015148735A
Publication Date:
February 02, 2017
Filing Date:
July 28, 2015
Export Citation:
Assignee:
NUFLARE TECHNOLOGY INC
International Classes:
H01J37/06; G03F7/20; H01J37/04; H01J37/248; H01J37/305; H01L21/027
Domestic Patent References:
| JP2012204173A | 2012-10-22 | |||
| JPH05171423A | 1993-07-09 | |||
| JP2011198583A | 2011-10-06 |
Foreign References:
| US6105589A | 2000-08-22 |
Attorney, Agent or Firm:
Tsuyoshi Shigeno
Takayuki Shigeno
Takayuki Shigeno