Title:
A compound semiconductor device and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5950643
Kind Code:
B2
Abstract:
An AlGaN/GaN HEMT includes a compound semiconductor laminated structure, a gate electrode formed above the compound semiconductor laminated structure, and a p-type semiconductor layer formed between the compound semiconductor laminated structure and the gate electrode, and the p-type semiconductor layer has tensile strain in a direction parallel to a surface of the compound semiconductor laminated structure.
Inventors:
Atsushi Yamada
Application Number:
JP2012062861A
Publication Date:
July 13, 2016
Filing Date:
March 19, 2012
Export Citation:
Assignee:
Transform Japan Co., Ltd.
International Classes:
H01L21/338; H01L21/20; H01L21/205; H01L21/28; H01L21/336; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Domestic Patent References:
| JP2005244072A | ||||
| JP2009071061A | ||||
| JP2008098434A | ||||
| JP11261169A | ||||
| JP2006032552A | ||||
| JP2005079346A |
Foreign References:
| WO2010084727A1 |
Attorney, Agent or Firm:
Yoshiyuki Inaba
Toshifumi Onuki
Akihiko Eguchi
Kazuhiko Naito
Takahiro Kobuki
Toshifumi Onuki
Akihiko Eguchi
Kazuhiko Naito
Takahiro Kobuki