Title:
The directions for the target for sputtering, and a manufacturing method of an oxide film
Document Type and Number:
Japanese Patent JP6204094
Kind Code:
B2
Abstract:
To provide a sputtering target which enables an In-Zn oxide film with a high degree of crystallinity to be formed and a method for using the sputtering target. The sputtering target includes a polycrystalline In-Zn oxide containing a plurality of crystal grains whose average grain size is greater than or equal to 0.06 mum and less than or equal to 3 mum. Further, the crystal grains each have a cleavage plane, and as the method for using the sputtering target, sputtered particles are separated from the cleavage planes by collision of an ion with the sputtering target, and the sputtered particles are positively charged and deposited on a deposition surface uniformly while repelling with each other.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2013147428A
Publication Date:
September 27, 2017
Filing Date:
July 16, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C23C14/34; C04B35/01
Domestic Patent References:
| JP2012052227A | ||||
| JP2001131736A | ||||
| JP2003041362A | ||||
| JP11213763A | ||||
| JP2013035740A |
Foreign References:
| WO2001038599A1 | ||||
| WO2003014409A1 |