Title:
An etching disposal method and a substrate processing device
Document Type and Number:
Japanese Patent JP6211893
Kind Code:
B2
Abstract:
A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.
Inventors:
Nishimura Eiichi
Kushibiki
Naomi Koizumi
Takashi Sone
Fumiko Yamashita
Kushibiki
Naomi Koizumi
Takashi Sone
Fumiko Yamashita
Application Number:
JP2013224567A
Publication Date:
October 11, 2017
Filing Date:
October 29, 2013
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; C23F4/00; H01L21/28; H01L21/3205; H01L21/3213; H01L21/768; H01L21/8239; H01L23/532; H01L27/105; H01L43/08; H01L43/12
Domestic Patent References:
| JP2004332045A | ||||
| JP2011103467A | ||||
| JP2005042143A |
Foreign References:
| US7205164 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito