An etching method of a semiconductor substrate, and a manufacturing method of a semiconductor device

Title:

An etching method of a semiconductor substrate, and a manufacturing method of a semiconductor device

Document Type and Number:

Japanese Patent JP6017273

Kind Code:

B2

Inventors:

Yutsugu Muro
Tetsuya Uemura
Tadashi Inaba
Atsushi Mizutani

Application Number:

JP2012250364A

Publication Date:

October 26, 2016

Filing Date:

November 14, 2012

Export Citation:

Assignee:

FUJIFILM Corporation

International Classes:

H01L21/306; H01L21/308

Domestic Patent References:

Attorney, Agent or Firm:

Toshizo Iida
Naosuke Miyamae

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