A gate drive circuit, a semiconductor device, and a power converter

Title:

A gate drive circuit, a semiconductor device, and a power converter

Document Type and Number:

Japanese Patent JP6258165

Kind Code:

B2

Abstract:

A gate driving circuit of embodiments is provided with a first transistor which controls a gate-on voltage applied to a gate electrode of a switching device, a second transistor which controls a gate-off voltage applied to the gate electrode of the switching device, a driving logic circuit which controls turn-on/turn-off of the first and second transistors, a first power source which supplies the gate-on voltage to the gate electrode when the first transistor is turned on, a second power source which supplies the gate-off voltage to the gate electrode when the second transistor is turned on, a first gate resistance variable circuit in which a plurality of field effect transistors is connected in parallel, a second gate resistance variable circuit in which a plurality of field effect transistors is connected in parallel, and a gate resistance control circuit which controls gate voltages of a plurality of field effect transistors.

Inventors:

Kazuto Takao
Tatsuo Shimizu
Takashi Shito

Application Number:

JP2014181654A

Publication Date:

January 10, 2018

Filing Date:

September 05, 2014

Export Citation:

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