Title:
The graphene cap for a copper interconnect structure
Document Type and Number:
Japanese Patent JP6250037
Kind Code:
B2
Abstract:
Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
Inventors:
Griselda Bonilla
Christos Dee Dimitrakopoulos
Alfred Grill
James B. Hannon
Qinhuang Lin
Deborah A Neumeier
Satoshi Oida
John A. Ott
Dirk Pfeiffer
Christos Dee Dimitrakopoulos
Alfred Grill
James B. Hannon
Qinhuang Lin
Deborah A Neumeier
Satoshi Oida
John A. Ott
Dirk Pfeiffer
Application Number:
JP2015511480A
Publication Date:
December 20, 2017
Filing Date:
April 08, 2013
Export Citation:
Assignee:
Samsung Electronics Company Limited
International Classes:
H01L21/3205; H01L21/768; H01L23/532
Domestic Patent References:
JP2012080006A | ||||
JP2012080014A | ||||
JP2007109736A | ||||
JP2011023420A |
Foreign References:
US20080251928 | ||||
WO2011080827A1 | ||||
US6084302 | ||||
US20090026616 | ||||
US20110201201 |
Attorney, Agent or Firm:
Shinya Mitsuhiro