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Title:
FORMING METHOD OF ELECTRODE PROVIDED TO PROJECTION OF SUBSTRATE
Document Type and Number:
Japanese Patent JP3120000
Kind Code:
B2
Abstract:

PURPOSE: To provide a method of selectively providing an electrode only onto the top of a projection through a lift-off method after the projection is provided to a substrate.
CONSTITUTION: An oxide film pattern is formed on a substrate, and the substrate is subjected to a dry etching process using the oxide film pattern as a mask, whereby a substrate 10a equipped with a projection 20 is formed. The side face of the projection 20 is of mirror-surface. Photoresist is applied so as to bury the substrate 10a and then removed until the upside 20b of the projection 20 is exposed. Thereafter, an ohmic electrode layer 16 is formed on all the surface of the substrate, and an ohmic electrode 16a is formed only on the upper face 20b of the projection 20 through a lift-off method.


Inventors:
Masao Kobayashi
Hideaki Okayama
Application Number:
JP17714994A
Publication Date:
December 25, 2000
Filing Date:
July 28, 1994
Export Citation:
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Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
G02B6/12; G02B6/13; H01L21/28; H01L21/3205; (IPC1-7): H01L21/3205; G02B6/12; G02B6/13; H01L21/28
Domestic Patent References:
JP4278531A
JP608820A
JP5446468A
JP6457734A
Attorney, Agent or Firm:
Takashi Ogaki



 
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