Title:
The improved type transistor design used in an advanced nanometer flash memory device
Document Type and Number:
Japanese Patent JP6195940
Kind Code:
B2
Abstract:
Improved PMOS and NMOS transistor designs for decoding circuitry used in advanced nanometer flash memory devices are disclosed.
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Inventors:
Nguyen Hung Quoc
Tran Hugh Van
Leain
Vu Touan
Tran Hugh Van
Leain
Vu Touan
Application Number:
JP2015556948A
Publication Date:
September 13, 2017
Filing Date:
January 15, 2014
Export Citation:
Assignee:
SILICON STORAGE TECHNOLOGY, INC.
International Classes:
G11C16/26; G11C7/06; G11C7/14; G11C16/28; H01L21/336; H01L21/822; H01L27/04; H01L27/10; H01L27/11519; H01L29/788; H01L29/792
Domestic Patent References:
| JP2007323706A | ||||
| JP2005135574A |
Foreign References:
| WO2006011223A1 |
Attorney, Agent or Firm:
Takaki Nishijima
Disciple Maru Ken
Shinichiro Tanaka
Fumiaki Otsuka
Hiroyuki Suda
Hiroshi Uesugi
Naoki Kondo
Yoshinobu Iwasaki
Disciple Maru Ken
Shinichiro Tanaka
Fumiaki Otsuka
Hiroyuki Suda
Hiroshi Uesugi
Naoki Kondo
Yoshinobu Iwasaki
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