Title:
The internal voltage generation circuit of a semiconductor memory device
Document Type and Number:
Japanese Patent JP5974494
Kind Code:
B2
Abstract:
An internal voltage generation circuit includes a vblh voltage generation circuit that generates a voltage vblh that is supplied as a high-voltage power supply of a sense amplifier, and a voltage distribution control circuit that has a first current source that pulls down an output node and a second current source that pulls up the output node. The output node is pulled down by the first current source operating, and the voltage thereof is maintained at a voltage that corresponds to a lower limit of a detection voltage value. The output node is pulled up by the second current source operating, and the voltage thereof is maintained at a voltage that corresponds to an upper limit of the detection voltage value.
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Inventors:
Takahiko Sato
Application Number:
JP2012008696A
Publication Date:
August 23, 2016
Filing Date:
January 19, 2012
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
G11C11/4074
Domestic Patent References:
| JP2010009680A | ||||
| JP5166398A |
Foreign References:
| US20110122711 | ||||
| WO2005124786A1 |
Attorney, Agent or Firm:
Takayoshi Kokubun
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