Title:
不活性ガスを用いたベンディングシステムによるホウ素化合物量を低減した多結晶シリコンの製造装置および製造方法
Document Type and Number:
Japanese Patent JP5573852
Kind Code:
B2
Abstract:
The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.
Inventors:
Kamei 健
Nakano 守
Nakano 守
Application Number:
JP2012000882A
Publication Date:
August 20, 2014
Filing Date:
January 06, 2012
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP.
International Classes:
C01B33/039; C01B33/035; C01B33/107
Attorney, Agent or Firm:
Masayoshi Suda