Title:
PRODUCTION METHOD OF SiC SUBSTRATE
Document Type and Number:
Japanese Patent JP2016172662
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a flattening treatment method of the surface of a SiC substrate.SOLUTION: In a flattening treatment method, at least one pair of substrates 1 each having a surface to be flattened which is covered with a single crystal SiC is heated in inert gas at a temperature equal to or below the melting point of SiC, in the state where each surface to be flattened is faced in contact with each other. In this case, the single crystal SiC is 4H-SiC or 6H-SiC, and a single crystal SiC surface orientation is a Si-surface or a C-surface, and a tilt angle to [11-20] direction is one of 0°, 4° or 8°.SELECTED DRAWING: Figure 1
Inventors:
INAMOTO TAKURO
FUJII KENJI
SATO MARIKO
FUJII KENJI
SATO MARIKO
Application Number:
JP2015053357A
Publication Date:
September 29, 2016
Filing Date:
March 17, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
C30B29/36; C30B33/12; H01L21/302
Attorney, Agent or Firm:
Patent Business Corporation Tani/Abe Patent Office
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