A manufacturing method of a SiC single crystal - TOYOTA JIDOSHA KABUSHIKI KAISHA

Title:

A manufacturing method of a SiC single crystal

Document Type and Number:

Japanese Patent JP6090287

Kind Code:

B2

Inventors:

Katsunori Tanno

Application Number:

JP2014223796A

Publication Date:

March 08, 2017

Filing Date:

October 31, 2014

Export Citation:

Assignee:

TOYOTA JIDOSHA KABUSHIKI KAISHA

International Classes:

C30B29/36

Domestic Patent References:

JP2009167047A

Foreign References:

WO2014103394A1

Attorney, Agent or Firm:

Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nobuo Sekine
Masaharu Konoue

Previous Patent: A machine learning device, the machine learning method, a classifying apparatus, a classifying metho...

Next Patent: PRODUCTION OF FLUORESCENT MATERIAL