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Title:
金属含有オニウム塩化合物、光崩壊性塩基及びレジスト組成物、並びに、該レジスト組成物を用いたデバイスの製造方法
Document Type and Number:
Japanese Patent JPWO2018084050
Kind Code:
A1
Abstract:
極端紫外線（ＥＵＶ）等の電離放射線に対して感度がよく、リソグラフィにおける解像性及び焦点深度に優れ、且つ、微細パターンにおけるＬＷＲ（Line width roughness）を低減できるレジスト組成物の光崩壊性塩基に好適に用いられる金属含有オニウム塩化合物及びそれを用いたレジスト組成物を提供する。光崩壊性塩基として特定の金属を含有するオニウム塩化合物とする。

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Inventors:
Tomoya Naito
Masamichi Hayakawa
Yoshiyuki Utsumi
Application Number:
JP2018548958A
Publication Date:
September 26, 2019
Filing Date:
October 25, 2017
Export Citation:
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Assignee:
Toyo Gosei Co., Ltd.
International Classes:
C07F7/22; C07C381/12; C09K3/00; G03F7/004; G03F7/039; G03F7/20
Domestic Patent References:
JP2009221454A2009-10-01
Foreign References:
WO2011093139A12011-08-04
Other References:
TETRAHEDRON, vol. 60(40), JPN6021026364, 2004, pages 8855 - 8860, ISSN: 0004545869
JOURNAL OF ORGANIC CHEMISTRY, vol. 68(3), JPN6021026366, 2003, pages 686 - 691, ISSN: 0004545870
Attorney, Agent or Firm:
sk patent corporation
Akihiko Okuno
Hiroyuki Ito



 
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