Title:
回折格子埋め込み型半導体の製作方法
Document Type and Number:
Japanese Patent JP2011517852
Kind Code:
A
Abstract:
Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
Inventors:
Lee, Yabo
Son, Kechan
Vysovsky, Nicholas Jay
The, Chun En
Son, Kechan
Vysovsky, Nicholas Jay
The, Chun En
Application Number:
JP2011501812A
Publication Date:
June 16, 2011
Filing Date:
March 27, 2009
Export Citation:
Assignee:
CORNING INCORPORATED
International Classes:
H01L21/20; H01S5/12; H01S5/125
Domestic Patent References:
| JPH09260775A | 1997-10-03 | |||
| JPH10261834A | 1998-09-29 | |||
| JPH11274637A | 1999-10-08 | |||
| JP2007299796A | 2007-11-15 | |||
| JP2004179274A | 2004-06-24 | |||
| JPH04127489A | 1992-04-28 | |||
| JPH07135194A | 1995-05-23 | |||
| JP2003051641A | 2003-02-21 | |||
| JPS63209189A | 1988-08-30 |
Attorney, Agent or Firm:
Yanagita Seiji
Go Sakuma
Go Sakuma