A manufacturing method of a heat insulation structure, a heating device, a substrate processing device, and a semiconductor device

Title:

A manufacturing method of a heat insulation structure, a heating device, a substrate processing device, and a semiconductor device

Document Type and Number:

Japanese Patent JP6170847

Kind Code:

B2

Abstract:

A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.

Inventors:

Tetsuya Kosugi
Motoya Takewaki
Murata etc.
Masaaki Ueno

Application Number:

JP2014031545A

Publication Date:

July 26, 2017

Filing Date:

February 21, 2014

Export Citation:

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Assignee:

Hitachi Kokusai Electric Co., Ltd.

International Classes:

H01L21/31; C23C16/44; H01L21/205; H01L21/22; H01L21/324

Domestic Patent References:

JP2012033871A
JP8236463A
JP2241029A
JP2000195808A
JP2005217335A
JP2002164298A
JP11260744A
JP5067577A
JP2138728A
JP2008172204A
JP2008300722A
JP2009180462A
JP2012216851A
JP2009158968A
JP2005045220A
JP2008047683A

Foreign References:

WO2008099449A1
WO2013141371A1
US20120006506
US5160545
US20010016306
US6283749

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