A manufacturing method of a length type high breakdown semiconductor device, and a length type high breakdown semiconductor device - National Institute of Advanced Industrial Science and Technology

Title:

A manufacturing method of a length type high breakdown semiconductor device, and a length type high breakdown semiconductor device

Document Type and Number:

Japanese Patent JP5939624

Kind Code:

B2

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Inventors:

Noriyuki Iwamuro
Shinsuke Harada
Yasuyuki Hoshi
Yuichi Harada

Application Number:

JP2012081736A

Publication Date:

June 22, 2016

Filing Date:

March 30, 2012

Export Citation:

Assignee:

National Institute of Advanced Industrial Science and Technology
Fuji Electric Co., Ltd.

International Classes:

H01L29/78; H01L21/28; H01L21/336; H01L29/12; H01L29/47; H01L29/872

Domestic Patent References:

Foreign References:

US6083814

Attorney, Agent or Firm:

Akinori Sakai

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