Title:
Method for manufacturing oxide semiconductor film
Document Type and Number:
Japanese Patent JP6310038
Kind Code:
B2
Abstract:
An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.
Inventors:
Miyanaga Saki
Application Number:
JP2016215337A
Publication Date:
April 11, 2018
Filing Date:
November 02, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/363
Domestic Patent References:
| JP2008281988A | ||||
| JP2008251657A | ||||
| JP10041515A | ||||
| JP2001345450A | ||||
| JP2000024445A |
Foreign References:
| WO2008126879A1 | ||||
| WO2007139009A1 | ||||
| WO2009081796A1 | ||||
| EP2020686A1 |