Title:
A manufacturing method of an oxide semiconductor layer
Document Type and Number:
Japanese Patent JP6031133
Kind Code:
B2
Abstract:
With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced.
Inventors:
Shunpei Yamazaki
Kengo Akimoto
Atsushi Umezaki
Kengo Akimoto
Atsushi Umezaki
Application Number:
JP2015015263A
Publication Date:
November 24, 2016
Filing Date:
January 29, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; C23C14/08; C23C14/34; G02F1/1368; H01L21/336; H01L51/50; H05B44/00
Domestic Patent References:
| JP2008053356A | ||||
| JP2006165529A |
Foreign References:
| US20070252147 | ||||
| EP1976018A1 |
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