Title:
半導体素子及び半導体素子の製造方法
Document Type and Number:
Japanese Patent JP2011517070
Kind Code:
A
Abstract:
A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from the active region is removed in regions. The material is removed using a dry-chemical removal of the semiconductor layer sequence. A property of a process gas is monitored during the removal to determine that the indicator layer has been reached based on a change in the property of the process gas.
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Inventors:
Christoph Aichler
Uwe Strauss
Uwe Strauss
Application Number:
JP2011502221A
Publication Date:
May 26, 2011
Filing Date:
March 09, 2009
Export Citation:
Assignee:
Osram Opto Semiconductors GmbH
International Classes:
H01S5/22
Domestic Patent References:
| JP2006165421A | 2006-06-22 | |||
| JPH10326940A | 1998-12-08 | |||
| JP2006093682A | 2006-04-06 | |||
| JP2004179532A | 2004-06-24 | |||
| JP2006222373A | 2006-08-24 |
Foreign References:
| WO2006051272A1 | 2006-05-18 | |||
| US20020094002A1 | 2002-07-18 |
Attorney, Agent or Firm:
Takuya Kuno
Toshio Yano
Takahashi
Kimihiro Hoshi
Hiroyasu Ninomiya
Ryoichi Shino
Einzel Felix-Reinhard
Toshio Yano
Takahashi
Kimihiro Hoshi
Hiroyasu Ninomiya
Ryoichi Shino
Einzel Felix-Reinhard